Fill in the blanks

1.  Valence band is the energy band which includes the energy levels of the …………...... electrons
2. Conduction band is the energy band above the …………………………..band.
3. The minimum energy required for shifting electrons from ……………… band to …………………. band is called energy band gap (Eg ).
4. Pure semiconductor when doped with the suitable impurity, is known as …………..semiconductor.
5. Both type of extrinsic semiconductors (p-type and n-type) are electrically …………………(positive, negative, neutral).
6. In n-type semiconductor, majority charge carriers are …………………….. and minority charge carriers are……………..
7. In p-type semiconductor, majority charge carriers are …………………….. and minority charge carriers are……………..
8. During formation of p-n junction, due to the variation in concentration across p and n sides, holes diffuse from ………….. and electrons diffuse from ……………………….
9. Depletion region is free from ………………………………….
10. Width of depletion region is of the order of ………………m.
11. Junction diode is said to be in forward bias when the positive terminal of the external
    battery is connected …………………………………… and negative terminal to the …………………………side of the diode.
12. An ideal diode offer……………………………….resistance in forward bias.
13. An ideal diode offer……………………………….resistance in reverse bias.
14. Cut-in voltage for Si diode in forward bias is …………………..volt
15. Cut-in voltage for Ge diode in forward bias is …………………..volt
16. Band gap for Si is …………………..electron volt.
17. Band gap for Ge is …………………..electron volt.
18. ………………….diode is used as voltage regulator.

Answers: